New in 2002 - GAIN HBTs

• Faster circuits
• Low power consumption
• Superior signal quality
• Simplified design
• Reduced size
• Higher yield
• Greater reliability
• Enhanced temperature stability
• Reduced DC and RF power consumption
• Increased circuit speed (35% higher)
  

Emitter

Layers

Collector

Layers

HBT

Transistor

GAIN Layer

n+ InGaAs Contact

n+ InGaAs Graded Cap

n+ GaAs Transition

n InGaP Emitter

p+ GaAsInN Base

50 nm

GaAs-based

HBT

Advantages of

The Kopin Process

GAIN HBTs - Second Generation

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