Proprietary Vertical Design
Faster circuits
Low power consumption
Superior signal quality
Simplified design
Reduced size
Higher yield
Advantages of
The Kopin Process
Emitter
Layers
Collector
Layers
HBT
Transistor
Base Layer
n+ InGaAs Contact
n+ InGaAs Graded Cap
n+ GaAs Transition
n AlGaAs Emitter
p+ GaAs Base
50 nm
GaAs-based
HBT
AlGaAs HBTs – First Generation
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