Proprietary Vertical Design

• Faster circuits
• Low power consumption
• Superior signal quality
• Simplified design
• Reduced size
• Higher yield
• Greater reliability
• Enhanced temperature stability

Emitter

Layers

Collector

Layers

HBT

Transistor

Base Layer

n+ InGaAs Contact

n+ InGaAs Graded Cap

n+ GaAs Transition

n InGaP Emitter

p+ GaAs Base

50 nm

GaAs-based

HBT

Advantages of

The Kopin Process

InGaP HBTs – Improved First Generation

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